发明名称 LOW TEMPERATURE DRIFT VOLTAGE REFERENCE CIRCUIT
摘要 A voltage reference circuit includes a first enhancement-mode PMOS transistor, a first enhancement mode NMOS transistor, and a first depletion-mode PMOS transistor coupled in series between a voltage supply and a ground. A second depletion-mode PMOS transistor is coupled to the first enhancement PMOS transistor to form a feedback circuit. A first resistive device is coupled between the voltage supply and the second depletion-mode PMOS transistor, and a second resistive device is coupled between the second depletion-mode PMOS transistor and the ground. A bias circuit is coupled to a gate of the first enhancement-mode NMOS transistor. The first enhancement-mode PMOS transistor and the first depletion-mode PMOS transistor are configured to operate in saturation region. A first reference voltage across the first resistor and a second reference voltage across the second resistor are configured to be independent of the magnitude of the voltage supply and have low temperature drift.
申请公布号 US2014104964(A1) 申请公布日期 2014.04.17
申请号 US201314052425 申请日期 2013.10.11
申请人 SHANGHAI SIM-BCD SEMICONDUCTOR MANUFACTURING CO.,LTD. 发明人 PENG SHAOHUA;LIU ZUTAO
分类号 G11C5/14 主分类号 G11C5/14
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