| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon substrate etching method which can solve stagnation of an etchant and improve deterioration in an etching rate on a wafer surface by improving replaceability of the etchant.SOLUTION: In an etching method of a silicon substrate of forming an intended recess by fixing a chamber with a silicon substrate which has an etching mask layer on a first surface so as to expose the etching mask layer in the chamber and by etching the silicon substrate through the etching mask layer by an etchant flowing in the chamber from an upstream side to a downstream side, the etching mask layer includes an etching opening 2 corresponding to the recess and a dummy opening 3 on an upstream side of the etching opening and aligned with the etching opening. |
