| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a nonvolatile memory cell of high operation speed and a high rewritable cycle and a nonvolatile memory cell of high reliability.SOLUTION: In a split gate type nonvolatile memory in which memory gate electrodes 11a and 11b are formed in a shape of sidewalls of control gate electrodes 5a and 5b, it is possible to produce a memory chip having a memory of high operation speed and a high rewritable cycle and a memory of high reliability at a low cost by jointly loading memory cells having different memory gate length La and Lb in an identical chip. |
