| 摘要 |
PROBLEM TO BE SOLVED: To allow an RH curve of a storage layer to be shifted regardless of saturation magnetization of a reference layer.SOLUTION: A magnetic memory of an embodiment includes a plurality of magnetoresistive elements MTJ which intersect in the first direction and are arranged in a second direction and each of which comprises a lamination structure in which a storage layer 10, a tunnel barrier layer 11, and a reference layer 12 are arranged in this order in a first direction; a conductive wire 18 which extends in the second direction and commonly connected with the plurality of magnetoresistive elements MTJ; insulation layers 17 which surround respective storage layers 10 of the plurality of magnetoresistive elements MTJ; and a shift correction layer 13 which are arranged adjacent to the second direction ends of the plurality of magnetoresistive elements MTJ. Two shift correction layers 13 arranged along a third direction are mutually separated. Further, the magnetization direction of the reference layer 12 and the magnetization direction of the shift correction layers 13 are the same. |
