发明名称 EUV MASK SET AND METHODS OF MANUFACTURING EUV MASKS AND INTEGRATED CIRCUITS
摘要 An EUV mask set and method of manufacturing is disclosed. In one embodiment, a set of EUV mask blanks is inspected to obtain information about defects in each of the EUV mask blanks. From the obtained information, a set of complementary functional portions is determined, wherein each functional portion is assigned to one of the EUV mask blanks and does not contain any of the defects. The functional portions of the EUV mask blanks of the EUV mask blank set complement one another to form a virtual image area corresponding in size to image areas of the EUV mask blanks. A predefined mask pattern is provided on the EUV mask blanks. Information identifying position and shape of the functional portions is used to control an illumination process for imaging the predefined mask pattern onto a target.
申请公布号 US2014106263(A1) 申请公布日期 2014.04.17
申请号 US201213652987 申请日期 2012.10.16
申请人 ADVANCED MASK TECHNOLOGY CENTER GMBH & CO.;ADVANCED MASK TECHNOLOGY CENTER GMBH & CO. KG 发明人 UTZNY CLEMENS
分类号 G03F1/22;G03F7/20 主分类号 G03F1/22
代理机构 代理人
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