SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing device which is equipped with an air flow with particular emphasis on countermeasures against heat by reducing stagnation of heat in a transfer chamber; and provide a substrate processing method and a semiconductor device manufacturing method.SOLUTION: A substrate processing device comprises: a processing chamber for processing a substrate 95; a transfer chamber 12 in which a substrate holder holds the substrate and waiting before the substrate 95 is carried in the processing chamber; a cyclic path for circulating at least one of or both of an inert gas and clean air in the transfer chamber 12; a cyclic path on-off valve arranged in the cyclic path for opening/closing the cyclic path; a supply path for supplying at least one of or both of the inert gas and the clean air to the cyclic path; a discharge path for discharging at least one of or both of the inert gas and the clean air from the cyclic path; a discharge path on-off valve arranged in the discharge path for opening/closing the discharge path; and an exhaust path which is arranged on an upper part of the transfer chamber and different from the discharge path.