NON-VOLATILE STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile storage device of stable operation.SOLUTION: A non-volatile storage device is provided which comprises a storage section and a control section. The storage section includes a magnetic memory cell including a laminate and a magnetic field application part. The laminate includes first and second ferromagnetic layers and a non-magnetic layer. A direction of magnetization of the second ferromagnetic layer is variable. The magnetic field application part applies a magnetic field containing a component in a direction vertical to a laminating direction to the second ferromagnetic layer. The control section changes a voltage between the first and second ferromagnetic layers. A change of a component in the laminating direction of an anisotropy field in the second ferromagnetic layer is defined as &Dgr;H, an anisotropy field in the laminating direction of the second ferromagnetic layer is defined as H, a magnetic field of the magnetic field application part is defined as Hand an anisotropy field in an in-plane direction of the second ferromagnetic layer is defined as H. The magnetic field of the magnetic field application part satisfies a condition represented by a numerical formula (1).