发明名称 MEMORY, SUPPLY VOLTAGE GENERATION CIRCUIT, AND OPERATION METHOD OF A SUPPLY VOLTAGE GENERATION CIRCUIT USED FOR A MEMORY ARRAY
摘要 A supply voltage generation circuit includes a comparison unit, a voltage level control unit and a voltage regulator circuit. The comparison unit is configured to compare input data and output data of a memory array to each other and thereby generating a comparison result, wherein the output data are storage data stored in a plurality of memory units of the memory array processed by a program operation according to the input data, and the comparison result indicates the number of different bits existing between the output data and the input data. The voltage level control unit is configured to generate a control signal according to the comparison result. The voltage regulator circuit is configured to provide a supply voltage for the memory array and adjust the value of the supply voltage according to the control signal. A memory and an operation method of a supply generation circuit used for a memory array are also provided.
申请公布号 US2014104962(A1) 申请公布日期 2014.04.17
申请号 US201213652422 申请日期 2012.10.15
申请人 UNITED MICROELECTRONICS CORP. 发明人 CHEN SHI-WEN;LU HSIN-PANG;TSAI CHUNG-CHENG;MOU YA-NAN
分类号 G11C7/06 主分类号 G11C7/06
代理机构 代理人
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