| 摘要 |
Static random access memory (SRAM) circuits are used in most digital integrated circuits to store digital data bits. SRAM memory circuits are generally read by decoding an address, reading from an addressed memory cell using a set of bit lines, outputting data from the read memory cell, and precharging the bit lines for a subsequent memory cycle. To handle memory operations faster, a bit line multiplexing system is proposed. Two sets of bit lines are coupled to each memory cell and each set of bit lines are used for memory operations in alternating memory cycles. During a first memory cycle, a first set of bit lines accesses the memory array while precharging a second set of bit lines. Then during a second memory cycle following the first memory cycle, the first set of bit lines are precharged while the second set of bit lines accesses the memory array to read data. |
