发明名称 |
RECESS GATE TRANSISTORS AND DEVICES INCLUDING THE SAME |
摘要 |
A recess gate transistor includes: a drain region and a source region in a semiconductor substrate and doped with first-type impurities; a recess region recessed in the semiconductor substrate between the drain region and the source region; a gate insulation layer on the recess region, a gate electrode on the gate insulation layer filling the recess region; and a charge pocket region below the recess region and doped with second-type impurities. A semiconductor chip includes a plurality of recess gate transistors, and an image sensor includes a semiconductor chip including a plurality of recess gate transistors. |
申请公布号 |
US2014104942(A1) |
申请公布日期 |
2014.04.17 |
申请号 |
US201314051035 |
申请日期 |
2013.10.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JIN YOUNG-GU;JUNG JU HWAN;PARK YOON DONG |
分类号 |
H01L29/768;G11C11/4074;H01L27/148 |
主分类号 |
H01L29/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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