发明名称 |
MULTI-GATE SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME |
摘要 |
A multi-gate semiconductor device and method for forming the same. A multi-gate semiconductor device is formed including a first fin of a first transistor formed on a semiconductor substrate having a first dopant type. The first transistor has a doped channel region of the first dopant type. The device also includes a second fin of a second transistor formed on the first dopant type semiconductor substrate. The second transistor has a doped channel region of a second dopant type. The device further includes a gate electrode layer of the second dopant type formed over the channel region of the first fin and a gate electrode layer of the first dopant type formed over the channel region of the second fin. |
申请公布号 |
US2014103438(A1) |
申请公布日期 |
2014.04.17 |
申请号 |
US201314108391 |
申请日期 |
2013.12.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WANG CHIH-CHING;HO JON-HSU;HUANG CHING-FANG;HSIEH WEN-HSING;YU TSUNG-HSING;SHEU YI-MING;GOTO KEN-ICHI;WU ZHIQIANG |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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