| 摘要 |
A semiconductor device includes a first semiconductor layer of a first conductivity type. A second semiconductor layer of a second conductivity type is on the first semiconductor layer. A third semiconductor layer is on the second semiconductor layer. A fourth semiconductor layer is selectively in the first semiconductor layer. A first trench and second trench penetrate from a surface of the third layer through the second layer to reach the first layer. An embedded electrode is in the first trench. A control electrode is above the embedded electrode via an insulating film. A lower end of the second trench is connected to the fourth semiconductor layer. A first main electrode is electrically connected to the first layer. A second main electrode is provided in the second trench. A Schottky junction is formed by the first layer and the second main electrode at a sidewall of the second trench. |
