| 摘要 |
A photovoltaic device is provided having a semiconductor substrate, an i-type amorphous layer formed over a front surface of the semiconductor substrate, a p-type amorphous layer formed over the i-type amorphous layer, an i-type amorphous layer formed over aback surface of the semiconductor substrate, and an n-type amorphous layer formed over the i-type amorphous layer. The i-type amorphous layer and the i-type amorphous layer have oxygen concentration profiles in which concentrations are reduced in a step-shape from regions near interfaces with the semiconductor substrate and along a thickness direction, and an oxygen concentration in the step-shape portion of the i-type amorphous layer is higher than an oxygen concentration in the step-shape portion of the i-type amorphous layer. |
