| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with suppressed cracks and low dislocation density, and a method of manufacturing the semiconductor light-emitting element.SOLUTION: There is provided the semiconductor light-emitting element according to an embodiment, including a first buffer portion, a light-emitting layer, a second buffer portion, and a silicon-containing layer. The first buffer portion has first to n-th buffer layers (n is an integer not less than 2 and not more than 9). The i-th buffer layer (i is an integer not less than 1 and less than n) of the first to n-th buffer layers has a lattice length Wi. The (i+1)-th buffer layer, which is provided on the i-th buffer layer and is in contact with the i-th buffer layer, has a lattice length W(i+1). The i-th buffer layer and the (i+1)-th buffer layer satisfy the relationship of 0.003≤(W(i+1)-Wi)/Wi≤0.008. The second buffer portion is provided between the first buffer portion and the light-emitting layer. The silicon-containing portion is provided between the first buffer portion and the second buffer portion. |
