发明名称 Non-volatile Memory Device With Plural Reference Cells, And Method Of Setting The Reference Cells
摘要 A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
申请公布号 US2014104961(A1) 申请公布日期 2014.04.17
申请号 US201213466878 申请日期 2012.05.08
申请人 SILICON STORAGE TECHNOLOGY, INC. 发明人 LIU XIAN;HEINZ MICHAEL JAMES;TAM EUGENE JINGLUN;DOAN MICHAEL K.;KOTOV ALEXANDER;DANG THO NGOC;FRAYER JACK EDWARD;YUN JUNG HEE;VU THUAN T.
分类号 G11C7/00 主分类号 G11C7/00
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