发明名称 |
Non-volatile Memory Device With Plural Reference Cells, And Method Of Setting The Reference Cells |
摘要 |
A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells. |
申请公布号 |
US2014104961(A1) |
申请公布日期 |
2014.04.17 |
申请号 |
US201213466878 |
申请日期 |
2012.05.08 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
LIU XIAN;HEINZ MICHAEL JAMES;TAM EUGENE JINGLUN;DOAN MICHAEL K.;KOTOV ALEXANDER;DANG THO NGOC;FRAYER JACK EDWARD;YUN JUNG HEE;VU THUAN T. |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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