| 摘要 |
A nonvolatile memory device including a control unit configured to read resistance value information for each of memory cells as initial resistance value information and store it temporarily before a voltage pulse for forming is applied, to set resistance value information as a threshold value serving as a target for completion of the forming, the resistance value information being obtained by multiplying the initial resistance value information by a predetermined coefficient, and to repeat application of the voltage pulse for forming and reading of the resistance value information until a resistance value indicated by the resistance value information on the memory cell becomes lower than a resistance value indicated by the threshold value. |
