| 摘要 |
<p>In plasma doping of a non-planar semiconductor device, a substrate including a non-planar semiconductor body on an upper part is obtained. A substrate including the non-planar semiconductor device can be arranged in a chamber. Plasma can be formed in the chamber. The plasma can include dopant ions. To inject the dopant ions into the region of the non-planar semiconductor body, a first bias voltage can be generated. To inject the dopant ions into the same region, a second bias voltage can be generated. In one embodiment, the first bias voltage is different from the second bias voltage. [Reference numerals] (202) Obtain a substrate including a pin formed on an upper part; (204) Arrange the substrate in a chamber; (206) Form a plasma in the chamber; (208) Generate a first bias voltage; (210) Generate a second bias voltage</p> |
