| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a high-quality ZnO-based semiconductor element.SOLUTION: A ZnO-based semiconductor element manufacturing method comprises: (a) forming an n-type ZnO-based semiconductor layer above a substrate; (b) forming a ZnO-based semiconductor active layer above the n-type ZnO-based semiconductor layer; (c) forming a first p-type ZnO-based semiconductor layer above the ZnO-based semiconductor active layer; and (d) forming a second p-type ZnO-based semiconductor layer above the first p-type ZnO-based semiconductor layer. The process (d) comprises: (d1) a process of supplying a group IB element which is Cu or/and Ag on a film to form an n-type MgZnO(0≤x≤0.6) single crystal film which is doped with one and more group-III elements selected from a group consisting of B, Ga, Al and In; and (d2) a process of annealing the n-type MgZnO(0≤x≤0.6) single crystal film doped with the group IB element to form a p-type film doped with the IB element. In the process (c), the firs p-type ZnO-based semiconductor layer doped with an element which reduces diffusion of the group IB element and a group IIIB element is formed. |
