| 摘要 |
PROBLEM TO BE SOLVED: To control a heat treatment performed on a semiconductor substrate with high accuracy.SOLUTION: In a semiconductor device manufacturing method: a semiconductor substrate SUB is heat treated by heat from a lamp HT; power input to the lamp HT is controlled by a control part CM; the control part CM controls an input of power to the lamp HT such that a timing of the temperature peak of the semiconductor substrate SUB comes after the peak of the power input to the lamp HT; and a temporal change of a magnitude of the power input to the lamp HT is controlled based on electric energy input to the lamp HT. |
