发明名称 |
FINFET CIRCUITS WITH VARIOUS FIN HEIGHTS |
摘要 |
A fin field-effect transistor (finFET) assembly includes a first finFET device having fins of a first height and a second finFET device having fins of a second height. Each of the first and second finFET devices includes an epitaxial fill material covering source and drain regions of the first and second finFET devices. The epitaxial fill material of the first finFET device has a same height as the epitaxial fill material of the second finFET device. |
申请公布号 |
US2014103451(A1) |
申请公布日期 |
2014.04.17 |
申请号 |
US201213654010 |
申请日期 |
2012.10.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
OUYANG QIQING C.;KERBER PRANITA;REZNICEK ALEXANDER |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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