发明名称 |
EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR WITH BACK GATE CONTACT |
摘要 |
A structure is provided in which the back gate regions are physically separated from one another as opposed to using reversed biased pn junction diodes. In the present disclosure, the back gate regions can be formed first through a buried dielectric material of an extremely thin semiconductor-on-insulator (ETSOI) substrate. After dopant activation, standard device fabrication processes can be performed. A semiconductor base layer portion of the ETSOI substrate can then be removed from the original ETSOI to expose a surface of the back gates. |
申请公布号 |
US2014103436(A1) |
申请公布日期 |
2014.04.17 |
申请号 |
US201213651874 |
申请日期 |
2012.10.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;HEKMATSHOARTABARI BAHMAN;KHAKIFIROOZ ALI;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD |
分类号 |
H01L27/12;H01L21/04 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|