发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>A method for manufacturing a semiconductor device includes irradiating light to an effective region of a semiconductor substrate. A wavelength of the light is a wavelength adapted so that light absorptance of the semiconductor substrate increases if an intensity of the light increases. The light is irradiated so that a focus point of the light is made within the semiconductor substrate in the irradiating.</p> |
申请公布号 |
EP2657958(A4) |
申请公布日期 |
2014.04.16 |
申请号 |
EP20100859503 |
申请日期 |
2010.11.10 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
TANIDA ATSUSHI |
分类号 |
H01L21/336;H01L21/268;H01L21/322;H01L21/76;H01L27/04;H01L29/06;H01L29/739;H01L29/78;H01L29/861 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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