发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>A method for manufacturing a semiconductor device includes irradiating light to an effective region of a semiconductor substrate. A wavelength of the light is a wavelength adapted so that light absorptance of the semiconductor substrate increases if an intensity of the light increases. The light is irradiated so that a focus point of the light is made within the semiconductor substrate in the irradiating.</p>
申请公布号 EP2657958(A4) 申请公布日期 2014.04.16
申请号 EP20100859503 申请日期 2010.11.10
申请人 TOYOTA JIDOSHA KABUSHIKI KAISHA 发明人 TANIDA ATSUSHI
分类号 H01L21/336;H01L21/268;H01L21/322;H01L21/76;H01L27/04;H01L29/06;H01L29/739;H01L29/78;H01L29/861 主分类号 H01L21/336
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