发明名称 |
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE |
摘要 |
<p>A GaN-based semiconductor is epitaxially grown on a silicon substrate with a surface orientation of (111). The difference between the lattice constant of the GaN and the silicon (111) surface is approximately 17%, which is quite large. Therefore, the dislocation density of the grown GaN exceeds 10 10 cm -2 . Screw dislocation density causes the leak current of the transistor using GaN to increases. Furthermore, the mobility of the transistor is reduced. Provided is a semiconductor substrate comprising a silicon substrate and a nitride semiconductor layer that is epitaxially grown on a (150) surface of the silicon substrate.</p> |
申请公布号 |
KR20140045303(A) |
申请公布日期 |
2014.04.16 |
申请号 |
KR20137018263 |
申请日期 |
2012.01.23 |
申请人 |
FURUKAWA ELECTRIC CO., LTD.;FUJI ELECTRIC CO., LTD. |
发明人 |
IWAMI MASAYUKI;KOKAWA TAKUYA |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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