| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic semiconductor device low in hygroscopicity, and having a characteristic hardly degraded with time; a high-reliability electronic device having the same; and an electronic apparatus. SOLUTION: The organic semiconductor device includes: a source electrode 20a; a drain electrode 20b; a gate electrode 50; a gate insulation layer 40 for insulating the source electrode 20a and the drain electrode 20b from the gate electrode 50; an organic semiconductor layer 30 formed in contact with the gate insulation layer 40; and a buffer layer 60 formed in contact with the side of the organic semiconductor layer 30 opposite to the gate insulation layer 40. At least either of the gate insulation layer 40 and the buffer layer 60 is formed by using an insulating polymer represented by general formula (1) or (2) as a main material. COPYRIGHT: (C)2010,JPO&INPIT |
