发明名称 |
METHOD OF FORMING THROUGH-SUBSTRATE INTERCONNECTS |
摘要 |
Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first part of the interconnect, and another part of the interconnect may be formed within such opening. Some embodiments include semiconductor constructions having a first part of a through-substrate interconnect extending partially through a semiconductor substrate from a first side of the substrate; and having a second part of the through-substrate interconnect extending from a second side of the substrate and having multiple separate electrically conductive fingers that all extend to the first part of the interconnect. |
申请公布号 |
EP2718964(A2) |
申请公布日期 |
2014.04.16 |
申请号 |
EP20120797279 |
申请日期 |
2012.05.03 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
WOOD, ALAN, G.;IRELAND, PHILIP, J. |
分类号 |
H01L21/768;H01L23/00;H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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