SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

摘要

Provided is a semiconductor device in which a reverse leakage current is suppressed and the mobility of a two-dimensional electron gas is high. A semiconductor device includes: an epitaxial substrate in which a group of group-III nitride layers are laminated on a base substrate such that a (0001) crystal plane is substantially in parallel with a substrate surface; and a Schottky electrode. The epitaxial substrate includes: a channel layer made of a first group-III nitride having a composition of In x1 Al y1 Ga z1 N (x1+y1+z1=1, z1>0); a barrier layer made of a second group-III nitride having a composition of In x2 Al y2 N (x2+y2=1, x2>0, y2>0); an intermediate layer made of GaN adjacent to the barrier layer; and a cap layer made of AlN and adjacent to the intermediate layer. A Schottky electrode is bonded to the cap layer.