| 摘要 |
A method and a storage system are provided to implement enhanced solid-state storage class memory (eSCM) including a directly connected dual in line memory (DIMM) card containing dynamic random access memory (DRAM) and at least one non-volatile memory; for example, phase change memory (PCM), resistive RAM (ReRAM), spin-transfer-torque RAM (STT-RAM), and NAND flash chips. An eSCM processor controls selectively, allocating data among the DRAM and at least one non-volatile memory based primarily on the size of the data set. [Reference numerals] (102) DIMM card; (108) NAND flash; (110) Processing unit; (112) Control code; (114) Memory electrical interface circuits |
