发明名称 SUPER-HIGH-VOLTAGE RESISTOR ON SILICON
摘要 An integrated circuit (IC) including a first layer of a conducting material; a second layer of an insulating material, where the second layer has a first side arranged adjacent to the first layer, and a second side; and a substrate arranged adjacent to the second side of the second layer. A first well arranged in the substrate. The first well is adjacent to the second side of the second layer. The substrate and the first well have opposite doping.
申请公布号 EP2718972(A1) 申请公布日期 2014.04.16
申请号 EP20120729258 申请日期 2012.05.11
申请人 MARVELL WORLD TRADE LTD. 发明人 SUTARDJA, SEHAT;KRISHNAMOORTHY, RAVISHANKER;CHUI, SIEW YONG
分类号 H01L27/06;H01L49/02 主分类号 H01L27/06
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