发明名称 |
SUPER-HIGH-VOLTAGE RESISTOR ON SILICON |
摘要 |
An integrated circuit (IC) including a first layer of a conducting material; a second layer of an insulating material, where the second layer has a first side arranged adjacent to the first layer, and a second side; and a substrate arranged adjacent to the second side of the second layer. A first well arranged in the substrate. The first well is adjacent to the second side of the second layer. The substrate and the first well have opposite doping. |
申请公布号 |
EP2718972(A1) |
申请公布日期 |
2014.04.16 |
申请号 |
EP20120729258 |
申请日期 |
2012.05.11 |
申请人 |
MARVELL WORLD TRADE LTD. |
发明人 |
SUTARDJA, SEHAT;KRISHNAMOORTHY, RAVISHANKER;CHUI, SIEW YONG |
分类号 |
H01L27/06;H01L49/02 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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