| 发明名称 |
MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME |
| 摘要 |
<p>In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a steering element above a substrate; and (2) fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (CNT) material above the substrate. Numerous other aspects are provided.</p> |
| 申请公布号 |
EP2227824(B1) |
申请公布日期 |
2014.04.16 |
| 申请号 |
EP20080869555 |
申请日期 |
2008.12.30 |
| 申请人 |
SANDISK 3D LLC |
发明人 |
CLARK, MARK;HERNER, BRAD;SCHRICKER, APRIL |
| 分类号 |
G11C13/00;B82Y10/00;G11C5/02;G11C13/02;H01L27/04;H01L27/10;H01L27/24;H01L45/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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