| 摘要 |
<p>Disclosed are a power MOS transistor having a trench gate and a method of manufacturing the same. The disclosed power MOS transistor includes a drift layer which is doped with a first type impurity and has an upper surface where a trench is formed, on a semiconductor substrate which is doped with a first type impurity, a well which is doped with a second type impurity in the bottom of the trench in the drift layer, a source which is doped with the first type impurity in the surface of the wall, a gate insulating layer which is formed on the trench, a gate electrode which is extended from the sidewall of the trench to a part of the source region and the gate insulating layer, a source electrode which is separated from the gate electrode and is on the source region, and a drain electrode which is on the lower part of the substrate.</p> |
