| 摘要 |
A radical passing device can selectively pass only radicals from plasma securely. In a chamber 11 of a substrate processing apparatus 10, a radical filter 14 provided between a wafer W mounted on a mounting table 12 and a plasma generator 13 includes a upper shield plate 17 and a lower shield plate 18 positioned opposite to the plasma generator 13 with the upper shield plate 17 therebetween. Further, the upper shield plate 17 has a multiple number of upper through holes 17a formed in a thickness direction thereof, and the lower shield plate 18 has a multiple number of lower through holes 18a formed in a thickness direction thereof. Furthermore, a negative DC voltage is applied to the upper shield plate 17, and a positive DC voltage is applied to the lower shield plate 18. |
