发明名称 |
Methods of manufacturing three dimensional semiconductor memory devices using sub-plates |
摘要 |
A method of manufacturing a Three Dimensional (3D) semiconductor memory device can be provided by forming at least one trench in a plate stack structure to divide the plate stack structure into a plurality of sub-plate stack structures between forming a plurality of vertical active patterns in the plate stack structure and forming pads of a stepped structure from the plate stack structure. |
申请公布号 |
US8697498(B2) |
申请公布日期 |
2014.04.15 |
申请号 |
US201113284435 |
申请日期 |
2011.10.28 |
申请人 |
JANG BYONG-HYUN;YOO DONGCHUL;PARK CHANJIN;CHOI HANMEI;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG BYONG-HYUN;YOO DONGCHUL;PARK CHANJIN;CHOI HANMEI |
分类号 |
H01L21/82;H01L21/00 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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