| 摘要 |
The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process, comprising using an aqua regia cleaning solution (comprising a mixture of nitric acid and hydrochloric acid) with microwave assisted heating. Low boiling temperature of hydrochloric acid prevents heating the aqua regia solution to a high temperature, impeding the effectiveness of post silicidation nickel and platinum residue removal. Therefore, embodiments of the invention provide a microwave assisted heating of the substrate in an aqua regia solution, selectively heating platinum residues without significantly increasing the temperature of the aqua regia solution, rendering platinum residues to be more soluble in aqueous solution and thereby dissolving it from the surface of the substrate. |
