发明名称 Switch architecture at low supply voltages
摘要 A sampled CMOS switch includes first and second NMOS devices in series between input and output nodes. The first and second NMOS devices are activated by a sample signal. A pair of low-voltage DEPMOS devices is connected in a“T”configuration between the input and output nodes. The low-voltage DEPMOS devices are activated by an inverted sample signal. A feedback circuit includes the DEPMOS devices together with a third high-voltage NMOS device and a current source. The third NMOS device is controlled by a signal on the input node. A switch switchably connects an analog voltage source to a source of the third NMOS device and gates of the DEPMOS devices in accordance with a phase of an inverted sample signal. The construction of the sampled CMOS switch enables the protection of the gate oxide insulation of the low-voltage DEPMOS transistors from high voltage damage.
申请公布号 US8698546(B1) 申请公布日期 2014.04.15
申请号 US201213625609 申请日期 2012.09.24
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 MISHRA VINEET;THINAKARAN RAJAVELU
分类号 H03K17/16 主分类号 H03K17/16
代理机构 代理人
主权项
地址