发明名称 |
Switch architecture at low supply voltages |
摘要 |
A sampled CMOS switch includes first and second NMOS devices in series between input and output nodes. The first and second NMOS devices are activated by a sample signal. A pair of low-voltage DEPMOS devices is connected in a“T”configuration between the input and output nodes. The low-voltage DEPMOS devices are activated by an inverted sample signal. A feedback circuit includes the DEPMOS devices together with a third high-voltage NMOS device and a current source. The third NMOS device is controlled by a signal on the input node. A switch switchably connects an analog voltage source to a source of the third NMOS device and gates of the DEPMOS devices in accordance with a phase of an inverted sample signal. The construction of the sampled CMOS switch enables the protection of the gate oxide insulation of the low-voltage DEPMOS transistors from high voltage damage. |
申请公布号 |
US8698546(B1) |
申请公布日期 |
2014.04.15 |
申请号 |
US201213625609 |
申请日期 |
2012.09.24 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MISHRA VINEET;THINAKARAN RAJAVELU |
分类号 |
H03K17/16 |
主分类号 |
H03K17/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|