发明名称 Compact RRAM device and methods of making same
摘要 Disclosed herein is a compact RRAM (Resistance Random Access Memory) device structure and various methods of making such an RRAM device. In one example, a device disclosed herein includes a gate electrode, a conductive sidewall spacer and at least one variable resistance material layer positioned between the gate electrode and the conductive sidewall spacer.
申请公布号 US8698118(B2) 申请公布日期 2014.04.15
申请号 US201213408221 申请日期 2012.02.29
申请人 TOH ENG HUAT;QUEK ELGIN;TAN SHYUE SENG;GLOBALFOUNDRIES SINGAPORE PTE LTD 发明人 TOH ENG HUAT;QUEK ELGIN;TAN SHYUE SENG
分类号 H01L29/02;H01L29/04;H01L29/06;H01L47/00 主分类号 H01L29/02
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