发明名称 |
Compact RRAM device and methods of making same |
摘要 |
Disclosed herein is a compact RRAM (Resistance Random Access Memory) device structure and various methods of making such an RRAM device. In one example, a device disclosed herein includes a gate electrode, a conductive sidewall spacer and at least one variable resistance material layer positioned between the gate electrode and the conductive sidewall spacer. |
申请公布号 |
US8698118(B2) |
申请公布日期 |
2014.04.15 |
申请号 |
US201213408221 |
申请日期 |
2012.02.29 |
申请人 |
TOH ENG HUAT;QUEK ELGIN;TAN SHYUE SENG;GLOBALFOUNDRIES SINGAPORE PTE LTD |
发明人 |
TOH ENG HUAT;QUEK ELGIN;TAN SHYUE SENG |
分类号 |
H01L29/02;H01L29/04;H01L29/06;H01L47/00 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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