发明名称 Method of making a FinFET device
摘要 The present disclosure provides many different embodiments of fabricating a FinFET device that provide one or more improvements over the prior art. In one embodiment, a method of fabricating a FinFET includes providing a semiconductor substrate and a plurality of dummy fins and active fins on the semiconductor substrate. A predetermined group of dummy fins is removed.
申请公布号 US8697515(B2) 申请公布日期 2014.04.15
申请号 US201213490108 申请日期 2012.06.06
申请人 YIN JOANNA CHAW YANE;WU CHI-HSI;TING KUO-CHIANG;CHEN KUANG-HSIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 YIN JOANNA CHAW YANE;WU CHI-HSI;TING KUO-CHIANG;CHEN KUANG-HSIN
分类号 H01L21/336;H01L21/8234;H01L21/84;H01L27/088;H01L29/66 主分类号 H01L21/336
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