发明名称 |
Method of making a FinFET device |
摘要 |
The present disclosure provides many different embodiments of fabricating a FinFET device that provide one or more improvements over the prior art. In one embodiment, a method of fabricating a FinFET includes providing a semiconductor substrate and a plurality of dummy fins and active fins on the semiconductor substrate. A predetermined group of dummy fins is removed. |
申请公布号 |
US8697515(B2) |
申请公布日期 |
2014.04.15 |
申请号 |
US201213490108 |
申请日期 |
2012.06.06 |
申请人 |
YIN JOANNA CHAW YANE;WU CHI-HSI;TING KUO-CHIANG;CHEN KUANG-HSIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YIN JOANNA CHAW YANE;WU CHI-HSI;TING KUO-CHIANG;CHEN KUANG-HSIN |
分类号 |
H01L21/336;H01L21/8234;H01L21/84;H01L27/088;H01L29/66 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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