发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
The invention provides an LDMOS transistor of which the time-dependent degrading of the performance due to the trapping of hot electrons in the gate insulation film is decreased. A body layer is disposed in a surface portion of an N−−type semiconductor layer. A source layer including an N−type layer is disposed in a surface portion of the body layer. An N−type drift layer is formed in a surface portion of the N−−type semiconductor layer. This drift layer includes a first region having a first N type impurity concentration peak region and a second region having a second N type impurity concentration peak region that is positioned deeper than the first N type impurity concentration peak region, the second region adjoining this first region. An N+ type drain layer is formed in a surface portion of the second region. |
申请公布号 |
US8698236(B2) |
申请公布日期 |
2014.04.15 |
申请号 |
US201113303850 |
申请日期 |
2011.11.23 |
申请人 |
TAKEDA YASUHIRO;INOUE SHINYA;OTSURU YUZO;SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
TAKEDA YASUHIRO;INOUE SHINYA;OTSURU YUZO |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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