发明名称 |
Vertical GaN JFET with gate source electrodes on regrown gate |
摘要 |
A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A first electrode is electrically coupled to the second surface of the GaN substrate. The semiconductor structure further includes a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the GaN substrate and a second GaN layer of a second conductivity type coupled to the first GaN epitaxial layer. The first GaN epitaxial layer comprises a channel region. The second GaN epitaxial layer comprises a gate region and an edge termination structure. A second electrode coupled to the gate region and a third electrode coupled to the channel region are both disposed within the edge termination structure. |
申请公布号 |
US8698164(B2) |
申请公布日期 |
2014.04.15 |
申请号 |
US201113315720 |
申请日期 |
2011.12.09 |
申请人 |
DISNEY DONALD R.;NIE HUI;KIZILYALLI ISIK C.;BROWN RICHARD J.;AVOGY, INC. |
发明人 |
DISNEY DONALD R.;NIE HUI;KIZILYALLI ISIK C.;BROWN RICHARD J. |
分类号 |
H01L29/808;H01L21/335 |
主分类号 |
H01L29/808 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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