发明名称 Semiconductor device and process for production thereof
摘要 The TFT substrate (100A) in the present invention includes a thin film transistor, a gate line (3a), a source line (13as), and first and second terminals (40a, 40b) for electrically connecting the thin film transistor to an external wiring which are formed on a substrate (1). The first terminal includes a first gate terminal portion (41a) and a first pixel electrode line (29a). The first pixel electrode line is in contact with the first gate terminal portion in a first opening portion (27c) provided in an insulating film (5), and covers an end face of the insulating film in the first opening portion. The second terminal includes a second gate terminal portion (41b) and a second pixel electrode line (29b). The second pixel electrode line is in contact with the second gate terminal portion in a second opening portion (27d) provided in the insulating film, and covers an end face of the insulating film in the second opening portion.
申请公布号 US8698153(B2) 申请公布日期 2014.04.15
申请号 US201113703696 申请日期 2011.06.21
申请人 MISAKI KATSUNORI;SHARP KABUSHIKI KAISHA 发明人 MISAKI KATSUNORI
分类号 H01L33/00 主分类号 H01L33/00
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