Organic semiconductor element, method of manufacturing organic semiconductor element, electronic device, electronic equipment and insulating layer forming composition

摘要

The present invention provides an organic semiconductor element which has a low hygroscopic property and whose property is hardly deteriorated with time and an electronic device and electronic equipment each provided with such an organic semiconductor element and having high reliability. The organic semiconductor element of the present invention includes: a source electrode 20a; a drain electrode 20b; a gate electrode 50; a gate insulating layer 40; an organic semiconductor layer 30; and a buffer layer (another insulating layer) 60, wherein at least one of the gate insulating layer 40 and the buffer layer 60 contains an insulating polymer with a main chain having both end portions and including repeating units represented by the following general formula (1) or (2): where R1 and R2 are the same or different and each of R1 and R2 is a divalent linkage group, and Y is an oxygen atom or a sulfur atom.