发明名称 Method for treating a semiconductor
摘要 Methods for treating a semiconductor material, and for making devices containing a semiconducting material, are presented. One embodiment is a method for treating a semiconductor material that includes a chalcogenide. The method comprises contacting at least a portion of the semiconductor material with a chemical agent. The chemical agent comprises a solvent, and an iodophor dissolved in the solvent.
申请公布号 US8697480(B1) 申请公布日期 2014.04.15
申请号 US201213682876 申请日期 2012.11.21
申请人 GENERAL ELECTRIC COMPANY;FIRST SOLAR, INC. 发明人 FOUST DONALD FRANKLIN
分类号 H01L21/00 主分类号 H01L21/00
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