发明名称 |
Heterostructure device and associated method |
摘要 |
A method of manufacturing a heterostructure device is provided that includes implantation of ions into a portion of a surface of a multi-layer structure. Iodine ions are implanted between a first region and a second region to form a third region. A charge is depleted from the two dimensional electron gas (2DEG) channel in the third region to form a reversibly electrically non-conductive pathway from the first region to the second region. On applying a voltage potential to a gate electrode proximate to the third region allows electrical current to flow from the first region to the second region. |
申请公布号 |
US8697506(B2) |
申请公布日期 |
2014.04.15 |
申请号 |
US201213418566 |
申请日期 |
2012.03.13 |
申请人 |
TILAK VINAYAK;VERTIATCHIKH ALEXEI;MATOCHA KEVIN SEAN;SANDVIK PETER MICAH;RAJAN SIDDHARTH;GENERAL ELECTRIC COMPANY |
发明人 |
TILAK VINAYAK;VERTIATCHIKH ALEXEI;MATOCHA KEVIN SEAN;SANDVIK PETER MICAH;RAJAN SIDDHARTH |
分类号 |
H01L21/335 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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