发明名称 |
A PHOTORESIST STRIPPER COMPOSITION RESTRAINING GALVANIC CORROSION |
摘要 |
<p>The present invention relates to a photoresist stripper composition. The composition improves the removal of residue of photoresist by dry/wet etching in the formation of patterns during the process of a TFT(Thin film transistor) among the manufacturing processes of a flat panel display substrate and suppresses a galvanic phenomenon by preventing corrosion in aluminum, copper, tungsten, molybdenum, titanium, niobium, capable of generating a galvanic phenomenon during the removal of photoresist and a metal wire in which alloy wires including the same are dually or triply laminated.</p> |
申请公布号 |
KR20140044728(A) |
申请公布日期 |
2014.04.15 |
申请号 |
KR20130072909 |
申请日期 |
2013.06.25 |
申请人 |
DONGWOO FINE-CHEM CO., LTD. |
发明人 |
SHIN, HYE RA;KO, KYUNG JUN;KIM, JEONG HYUN;CHOI, KYEONG MUK |
分类号 |
G03F7/42;G02F1/13;G03F7/34;H01L21/027 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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