发明名称 A PHOTORESIST STRIPPER COMPOSITION RESTRAINING GALVANIC CORROSION
摘要 <p>The present invention relates to a photoresist stripper composition. The composition improves the removal of residue of photoresist by dry/wet etching in the formation of patterns during the process of a TFT(Thin film transistor) among the manufacturing processes of a flat panel display substrate and suppresses a galvanic phenomenon by preventing corrosion in aluminum, copper, tungsten, molybdenum, titanium, niobium, capable of generating a galvanic phenomenon during the removal of photoresist and a metal wire in which alloy wires including the same are dually or triply laminated.</p>
申请公布号 KR20140044728(A) 申请公布日期 2014.04.15
申请号 KR20130072909 申请日期 2013.06.25
申请人 DONGWOO FINE-CHEM CO., LTD. 发明人 SHIN, HYE RA;KO, KYUNG JUN;KIM, JEONG HYUN;CHOI, KYEONG MUK
分类号 G03F7/42;G02F1/13;G03F7/34;H01L21/027 主分类号 G03F7/42
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