发明名称 Photovoltaic device with double-junction
摘要 The present invention, a photovoltaic device includes a substrate having a first doped-type, a first doped region having a second doped-type in the substrate, a second doped region in a portion of the first doped region and exposing the other portion of the first doped region, and a third doped region in the exposed portion of the first doped region. The polarity of the second doped-type is substantially reversed with that of the first doped-type. The second doped region has a polarity substantially identical to that of the first doped-type and a doped concentration substantially greater than that of the substrate. The third doped region has a polarity substantially identical to that of the second doped-type and a doped concentration substantially greater than that of the first doped region. The first doped-type is one of N-type and P-type, while the second doped-type is the other of P-type and N-type.
申请公布号 US8697986(B2) 申请公布日期 2014.04.15
申请号 US201113037508 申请日期 2011.03.01
申请人 HUANG MING-JENG;LIN HAN-TU;AU OPTRONICS CORPORATION 发明人 HUANG MING-JENG;LIN HAN-TU
分类号 H01L31/00;H01L27/142;H01L31/0352 主分类号 H01L31/00
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