发明名称 |
Semiconductor chip including a plurality of chip areas and fabricating method thereof |
摘要 |
Disclosed is a method of fabricating a semiconductor chip. The method includes forming a silicon layer; forming a first layer formed on the silicon layer and including a first seal ring surrounding a first chip area and a second seal ring surrounding a second chip area; and forming a second layer formed on the first layer and including a metal interconnection connecting one of the first and second chip areas and an external terminal. |
申请公布号 |
US8697568(B2) |
申请公布日期 |
2014.04.15 |
申请号 |
US201213647785 |
申请日期 |
2012.10.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG YOUNG MIN;KIM HYUNGWOO;PARK KI-CHUL;LEE SANGMAN |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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