发明名称 Semiconductor chip including a plurality of chip areas and fabricating method thereof
摘要 Disclosed is a method of fabricating a semiconductor chip. The method includes forming a silicon layer; forming a first layer formed on the silicon layer and including a first seal ring surrounding a first chip area and a second seal ring surrounding a second chip area; and forming a second layer formed on the first layer and including a metal interconnection connecting one of the first and second chip areas and an external terminal.
申请公布号 US8697568(B2) 申请公布日期 2014.04.15
申请号 US201213647785 申请日期 2012.10.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG YOUNG MIN;KIM HYUNGWOO;PARK KI-CHUL;LEE SANGMAN
分类号 H01L21/4763 主分类号 H01L21/4763
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