发明名称 Metal contacts for molecular device junctions and surface-diffusion-mediated deposition
摘要 Metal contact formation for molecular device junctions by surface-diffusion-mediated deposition (SDMD) is described. In an example, a method of fabricating a molecular device junction by surface-diffusion-mediated deposition (SDMD) includes forming a molecular layer above a first region of a substrate. A region of metal atoms is formed above a second region of the substrate proximate to, but separate from, the first region of the substrate. A metal contact is then formed by migrating metal atoms from the region of metal atoms onto the molecular layer.
申请公布号 US8697562(B2) 申请公布日期 2014.04.15
申请号 US201113167201 申请日期 2011.06.23
申请人 MCCREERY RICHARD L.;BONIFAS ANDREW P.;LUI VICKI WAI-SHUM 发明人 MCCREERY RICHARD L.;BONIFAS ANDREW P.;LUI VICKI WAI-SHUM
分类号 H01L21/44 主分类号 H01L21/44
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