GUARD RINGS ON FIN STRUCTURES

摘要

A device includes a semiconductor substrate, an isolation region which is extended to the inner part of the semiconductor substrate, semiconductor fins which are higher than the upper surface of the isolation region, and gate stacks. Each gate stack includes a gate dielectric on the sidewall and the upper surface of one among the semiconductor fins, and a gate electrode on the gate dielectric. Each device further includes semiconductor regions which touch them between two semiconductor fins which are adjacent to each other among the semiconductor fins. Each device further includes contact plugs which are electrically connected to one among the semiconductor regions. An electrical connection electrically interconnects the gate electrode of the gate stacks and the semiconductor regions.