| 摘要 |
A thin film transistor array and a method for manufacturing the same are provided to improve the flexibility of a metal pattern by forming the metal pattern to contain a conductive polymer matrix, thereby preventing the metal pattern from being cracked due to transformation of a substrate. A thin film transistor array comprises a flexible substrate(21) and thin film transistors formed on the flexible substrate. Each of the thin film transistors contains nano-metal particle of which an end is coupled with activated oxygen, and a conductive polymer matrix coupled with the activated oxygen. The thin film transistor array further comprises a plurality of gate lines(22) for supplying a scan signal therethrough, and a plurality of data lines(25) for supplying a data signal threrethrough. The data lines and the gate lines cross each other. Each of the data lines and the gate lines contains nano-metal particle of which an end is coupled with activated oxygen, and a conductive polymer matrix coupled with the activated oxygen. |
