| 摘要 |
PURPOSE: A light emitting diode and a manufacturing method thereof are provided to improve the inner quantum efficiency of the light emitting diode by removing a defect part on which a threading dislocation is concentrated in a vertically grown semiconductor laminated structure. CONSTITUTION: A semiconductor laminated structure (110) includes an n-type compound semiconductor layer (111), an active layer (113), and a p-type compound semiconductor layer (115). An insulation pattern (120) is formed on the semiconductor laminated structure. A first transparent electrode (130) is formed on the semiconductor laminated structure. A P-type electrode (140) is electrically connected to the first transparent electrode. A second transparent electrode (150) is formed on the lower side of the semiconductor laminated structure. |
