METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device is provided. The method of manufacturing a semiconductor device includes a step of forming a first conductive sacrificial layer on a substrate, a step of forming a second insulating sacrificial layer on the first sacrificial layer, a step of etching the first and the second sacrificial layer and forming an opening part to expose the upper surface of the substrate, a step of conformally forming a seed layer on the first and the second sacrificial layer which have the opening part, and a step of forming a conductive pattern which buries the opening part formed in the seed layer by plating.